Research is underway to replace silicon (Si) with silicon carbide (SiC) in power devices, which are critical components of eco-friendly electric vehicles, electric propulsion ships, hybrid vehicles, and trains. Among various methods for achieving high-quality SiC crystal growth, the top-seeded solution growth (TSSG) method has received significant attention. However, this method is hindered by challenges such as slow growth rates and the formation of numerous defects in SiC crystals, which can adversely affect the efficiency and reliability of the final product. To address these issues, this study undertook foundational research to improve the TSSG method for SiC single crystal growth. The interactions between commonly used molten materials, Si and Si0.6Cr0.4, and the carbon crucible were analyzed by examining contact angle variations at different heating temperatures and assessing cross-sectional structures of samples after natural cooling. Using wettability analysis equipment, Si and Si0.6Cr0.4 were placed on a carbon substrate serving as a crucible, and contact angle changes were recorded during heating and melting. Results indicated that at 1800°C, the contact angles of Si and Si0.6Cr0.4 with the carbon substrate differed by approximately 10°. Cross-sectional observations revealed that Si permeated the carbon substrate and solidified, while Si0.6Cr0.4 exhibited significantly reduced penetration, suggesting notable differences in wettability and interaction with the substrate material. These findings are expected to provide foundational data for further research on SiC single crystal growth via the TSSG method.